State-space modeling of the radio frequency inductively-coupled plasma generator
نویسندگان
چکیده
منابع مشابه
Effects of radio frequency bias frequency and radio frequency bias pulsing on SiO2 feature etching in inductively coupled fluorocarbon plasmas
The effect of radio frequency ~rf! bias frequency on SiO2 feature etching using inductively coupled fluorocarbon plasmas is investigated. It is found that the rf bias frequency can have an important effect on SiO2 feature etch rate, microtrenching phenomena, and SiO2-to-photoresist etch selectivity. In addition, the effect of rf bias pulsing on inductively coupled fluorocarbon plasma SiO2 etchi...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2010
ISSN: 1742-6596
DOI: 10.1088/1742-6596/208/1/012056